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| 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 400 400 30 10 40 80 360 10 8 150 -55 to150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.56 Unit C/W Circuit Configuration 4 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 5.85 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2002-09-04 2SK3499 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 320 V, VGS = 10 V, ID = 10 A Duty < 1%, tw = 10 ms = VDD ~ 200 V Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton 10 V VGS 0V 50 9 ID = 5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 400 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5.0 A VDS = 10 V, ID = 5.0 A Min 3/4 30 3/4 400 2.0 3/4 4.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 4.0 0.8 1340 160 490 22 60 32 140 34 18 16 Max 10 3/4 100 3/4 4.0 0.55 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA V mA V V W S RL = 40 W Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 350 3.6 Max 10 40 -1.7 3/4 3/4 Unit A A V ms mC Marking Lot Number K3499 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-04 2SK3499 ID - VDS 10 Common source 15 Tc = 25C pulse test 10 20 5.6 6.0 8.0 5.4 5.2 16 10 15 8.0 ID - VDS 6.0 5.75 Common source Tc = 25C pulse test 8 (A) (A) ID 6 ID 5.5 12 5.25 8 5.0 4.75 4 4.5 VGS = 4.0 V 5.0 4.8 4.6 Drain current 4 2 4.4 4.2 0 VGS = 4.0 V 0 2 4 6 8 10 Drain current 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 20 V pulse test 10 VDS - VGS Common source Tc = 25C pulse test 16 (V) 8 (A) ID Drain-source voltage 12 VDS 6 Drain current 8 100 4 25 Tc = -55C 0 0 2 4 6 8 10 4 ID = 10 A 2 5.0 2.5 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 30 RDS (ON) - ID 5 Common source (S) Common source VDS = 20 V Pulse test 10 25 5 3 100 iYfsi Forward transfer admittance Drain-source on resistance Tc = -55C 3 Tc = 25C Pulse test (9) RDS (ON) 1 VGS = 10 V 15 0.3 0.5 1 0.5 0.3 0.3 1 3 5 10 30 0.1 0.5 1 3 5 10 3 30 50 Drain current ID (A) Drain current ID (A) 3 2002-09-04 2SK3499 RDS (ON) - Tc (W) 2.5 Common source VGS = 10 V pulse test 100 Common source Tc = 25C 30 pulse test IDR - VDS RDS (ON) 2.0 Drain reverse current IDR (A) ID = 10 A 5 2.5 10 Drain-source on resistance 1.5 3 10 5 3 1 VGS = 0, -1 V -0.8 -1.0 -1.2 1.0 1 0.5 0.3 0 -80 -40 0 40 80 160 0.1 0 -0.2 -0.4 -0.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 Ciss 5 Vth - Tc Common source VDS = 10 V ID = 1 mA pulse test Gate threshold voltage Vth (V) 4 (pF) 1000 500 300 Coss 100 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10 Crss Capacitance C 3 2 1 10 0.1 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 100 20 500 Dynamic input/output characteristics Common source ID = 10 A Tc = 25C pulse test VDD = 80 V VDS 300 160 320 200 8 12 20 (W) (V) 80 16 400 16 Drain power dissipation 40 8 Drain-source voltage 20 4 100 VGS 4 0 0 40 80 120 160 0 200 0 0 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-04 Gate-source voltage 60 12 VDS VGS PD (V) 2SK3499 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.3 0.2 0.1 0.05 0.02 0.03 0.01 Single Pulse PDM t T Duty = t/T Rth (ch-c) = 1.56C/W 100 m 1m 10 m 100 m 1 10 0.1 0.01 0.003 10 m Pulse width tw (S) Safe operating area 100 50 ID max (pulsed) * 30 100 ms * 10 ID max (continuous) 1 ms * 3 DC operation Tc = 25C 500 EAS - Tch (mJ) Avalanche energy EAS 400 ID (A) 300 Drain current 200 1 0.5 0.3 100 0 25 0.1 0.05 *: Single nonrepetitive pulse Tc = 25C VDSS max 50 75 100 125 150 Channel temperature (initial) Tch (C) 0.03 Curves must be derated linearly with increase in temperature. 0.01 1 10 100 1000 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 5.85 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-09-04 2SK3499 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-04 |
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